2400c high temperature Silicon carbide recrystallization sintering test

Sintering Temperature: 2400℃

Sintering equipment: NTI-SJL-300W Silicon Carbide Recrystallization Sintering Furnace

Sintering material: SIC tube or SIC plate​

Manufacturer: Zhuzhou Nuotian Electric Heating Technology Co., Ltd.​

Core Purpose: Adopting high-temperature recrystallization sintering technology to realize densification and purification of silicon carbide (SiC) ceramic components, suitable for manufacturing high-performance SiC products used in aerospace, industrial furnaces, semiconductor equipment, and high-temperature corrosion-resistant engineering fields.​

Project Background​

A leading advanced ceramic manufacturer focuses on the R&D and production of high-performance silicon carbide components. Its original sintering equipment faced challenges including low density of finished products (≤92%), poor structural uniformity, and unstable high-temperature resistance, which failed to meet the technical requirements of aerospace and semiconductor industries for SiC components (density ≥98%, operating temperature resistance up to 1600℃, and corrosion resistance to harsh media).​

Through in-depth technical communication and on-site verification, the company selected Zhuzhou Nuotian Electric Heating Technology Co., Ltd. to customize the NT-SC-3000 Silicon Carbide Recrystallization Sintering Furnace, aiming to break through the bottleneck of traditional sintering processes