Silicon Carbide Powder Sintering Experiment
2026-02-05
Case Study: SiC Powder Purification with Nuotian Tech's Lab Resistance Furnace
A domestic university client engaged our team to evaluate the purification performance of silicon carbide (SiC)powder after 800°C heat treatment, using our 2200°C Lab Resistance Furnace.
Experiment Overview
- Objective: To achieve material purification by removing residual impurities from raw SiC powder through
controlled sintering. - Equipment: Nuotian 2200°C Lab Resistance Furnace (configured with precise temperature control andatmosphere stabilization).
- Process: The raw SiC powder was loaded into a graphite crucible, sintered at 800°C, and then weighed beforeand after treatment to quantify mass loss from impurity removal.
Post-sintering view inside our 2200°C Lab Resistance Furnace, after completing the 800°C SiC powder purification cycle
Precision weighing of SiC powder before and after sintering, to quantify mass loss from impurity removal.
